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Author

Yu-Ming Lin

29 papers · 2005–2024

2005: 22006: 02007: 22008: 42009: 42010: 62011: 42012: 22013: 02014: 02015: 02016: 02017: 02018: 02019: 02020: 12021: 02022: 22023: 12024: 1
2005peak 6 in 20102024

Frequent co-authors

Papers

showing 1–25 of 29 RSS

Graphene Nano-Ribbon Electronics

Zhihong Chen, Yu-Ming Lin, Michael J. Rooks +1 more

cond-mat.mtrl-sci · · cited 1,402× · arXiv ↗ · more like this ·

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.

High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1 more

cond-mat.mtrl-sci · · cited 480× · arXiv ↗ · more like this ·

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.

Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Yu-Ming Lin, Joerg Appenzeller, Joachin Knoch +2 more

cond-mat.mtrl-sci · · cited 116× · arXiv ↗ · more like this ·

We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation…

Web image annotation by fusing visual features and textual information

Vincent S. Tseng, Ja-Hwung Su, Bowen Wang +1 more

Computer Vision and Pattern Recognition · · cited 31× · DOI ↗ · more like this ·

In this paper, we propose a novel web image annotation method, namely FMD (Fused annotation by Mixed model graph and Decision tree), which combines visual features and textual information to conceptualize the web images. The FMD approach consists of three main processes: 1) construct the visual-based model, namely ModelMMG, 2) construct the textual-based model, namely ModelDT, and 3) fuse ModelMMG and ModelDT as ModelFMD for annotating the images. The purpose of visual-based annotation model is to objectify the image not only by the global content of the image but also by its local content of composing objects. The textual-based annotation model is to handle the problems of user-specified dependency of keywords and the complex computation due to high dimensionalities in text features. The experimental results reveal that the proposed FMD method is very effective for web image annotation…

Implementing a Hand Gesture Recognition System Based on Range-Doppler Map

Yu-Chiao Jhaung, Yu-Ming Lin, Chiao Zha +2 more

Human-Computer Interaction · Sensors · · cited 27× · DOI ↗ · more like this ·

There have been several studies of hand gesture recognition for human-machine interfaces. In the early work, most solutions were vision-based and usually had privacy problems that make them unusable in some scenarios. To address the privacy issues, more and more research on non-vision-based hand gesture recognition techniques has been proposed. This paper proposes a dynamic hand gesture system based on 60 GHz FMCW radar that can be used for contactless device control. In this paper, we receive the radar signals of hand gestures and transform them into human-understandable domains such as range, velocity, and angle. With these signatures, we can customize our system to different scenarios. We proposed an end-to-end training deep learning model (neural network and long short-term memory), that extracts the transformed radar signals into features and classifies the extracted features into…

Multi‐level Deep Correlative Networks for Multi‐modal Sentiment Analysis

Guoyong Cai, Guangrui Lyu, Yu-Ming Lin +1 more

Artificial Intelligence · Chinese Journal of Electronics · · cited 9× · DOI ↗ · more like this ·

Multi-modal sentiment analysis (MSA) is increasingly becoming a hotspot because it extends the conventional Sentiment analysis (SA) based on texts to multi-modal content which can provide richer affective information. However, compared with textbased sentiment analysis, multi-modal sentiment analysis has much more challenges, because the joint learning process on multi-modal data requires both fine-grained semantic matching and effective heterogeneous feature fusion. Existing approaches generally infer sentiment type from splicing features extracted from different modalities but neglect the strong semantic correlation among cooccurrence data of different modalities. To solve the challenges, a multi-level deep correlative network for multimodal sentiment analysis is proposed, which can reduce the semantic gap by analyzing simultaneously the middlelevel semantic features of images and the…

E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

Wenhan Chen, Haodi Tang, Yu Wang +4 more

Artificial Intelligence · Micromachines · · cited 8× · DOI ↗ · more like this ·

With its unique computer paradigm, the Ising annealing machine has become an emerging research direction. The Ising annealing system is highly effective at addressing combinatorial optimization (CO) problems that are difficult for conventional computers to tackle. However, Ising spins, which comprise the Ising system, are difficult to implement in high-performance physical circuits. We propose a novel type of Ising spin based on an electrically-controlled magnetic tunnel junction (MTJ). Electrical operation imparts true randomness, great stability, precise control, compact size, and easy integration to the MTJ-based spin. In addition, simulations demonstrate that the frequency of electrically-controlled stochastic Ising spin (E-spin) is 50 times that of the thermal disturbance MTJ-based spin (p-bit). To develop a large-scale Ising annealing system, up to 64 E-spins are implemented. Our…

Preservation of the harmonic overtones in the violin family beyond Stradivari

Li Su, Chen-Chieh Chang, Yu-Ming Lin +4 more

physics.class-ph · · cited 1× · arXiv ↗ · more like this ·

Three hundred years ago, Antonio Stradivari enjoyed the golden period of the violin making in the human history. Luthiers and researchers endeavor to study his legendary legacy. Unfortunately, a consensus that the present progress has reached his level remains lacking. Most of the instruments suffer from low sounding power and enigmatic deficit of harmonic overtones. In fact, there is significant energy dissipation in the acoustic couplings in the violin family, completely unaware to luthiers and researchers. The current acoustic mechanism is inefficient in resonance of the wooden plates and hence is the low rate of mechanical energy conversion to the desired sound. We propose a new method for the amelioration of the acoustic couplings to enhance the preservation of the overtone components up to 161% of the pristine and to reduce the instrumental dissipation intensity up to 3.8 dB off…

Defects and development of catastrophe insurance in China

Yu-ming Lin, Yi-bei Li

Sociology and Political Science · · cited 1× · DOI ↗ · more like this ·

Catastrophe refers to natural disasters that caused huge damages to people's lives and property. Catastrophe insurance is a form of insurance through which the risks caused by natural disasters like earthquakes, hurricanes, tsunamis, floods can be dispersed. In recent years, the importance of catastrophe insurance has brought to the forefront of many countries and the catastrophe insurance products and systems are improving as the enormous losses caused by catastrophic natural disasters. China's economic losses caused by natural disasters are also very serious, but there is no catastrophe insurance has been established. To establish an insurance as the basis?variety of social assistance and government financial support for disaster relief system is currently respond to important tasks of catastrophic natural disasters.

Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Yu-Ming Lin, Phaedon Avouris

cond-mat.mtrl-sci · · cited 0× · arXiv ↗ · more like this ·

Low-frequency 1/f noise is ubiquitous, and dominates the signal-to-noise performance in nanodevices. Here we investigate the noise characteristics of single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f noise behavior for bilayer devices. Graphene is a single layer of graphite, where carbon atoms form a 2D honeycomb lattice. Despite the similar composition, bilayer graphene (two graphene monolayers stacked in the natural graphite order) is a distinct 2D system with a different band structure and electrical properties. In graphene monolayers, the 1/f noise is found to follow Hooge's empirical relation with a noise parameter comparable to that of bulk semiconductors. However, this 1/f noise is strongly suppressed in bilayer graphene devices, and exhibits an unusual dependence on the carrier density, different from most other materials. The unexpected noise…

DarkSHINE Baseline Design Report: Physics Prospects and Detector Technologies

Jing Chen, Ji-Yuan Chen, Jun-Feng Chen +39 more

physics.ins-det · · arXiv ↗ · more like this ·

DarkSHINE is a newly proposed fixed-target experiment initiative to search for the invisible decay of Dark Photon via missing energy/momentum signatures, based on the high repetition rate electron beam to be deployed/delivered by the Shanghai High repetition rate XFEL and Extreme light facility (SHINE). This report elaborates the baseline design of DarkSHINE experiment by introducing the physics goals, experimental setups, details of each sub-detector system technical designs, signal and backgground modelings, expected search sensitivities and future prospects, which mark an important step towards the further prototyping and technical demonstrations.

High-frequency performance of scaled carbon nanotube array field-effect transistors

Mathias Steiner, Michael Engel, Yu-Ming Lin +10 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

Quantum behavior of graphene transistors near the scaling limit

Yanqing Wu, Vasili Perebeinos, Yu-ming Lin +3 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene…

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins +7 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.

Ultimate RF Performance Potential of Carbon Electronics

Siyuranga O. Koswatta, Alberto Valdes-Garcia, Mathias B. Steiner +2 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the ultimate RF performance potential for these two unique devices using semi-classical ballistic transport simulations. It is shown that the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs. Thus, both devices could deliver higher cut-off frequencies than traditional semiconductors such as Si and III-V's. In the case of AFETs, we show that their RF operation is not sensitive to the diameter variation of semiconducting tubes and the presence of metallic tubes in the channel. The ultimate fT and fMAX values in AFETs are observed to be higher than that in GFETs. The optimum device…

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +2 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of $10^4$ and a subthreshold slope of ~110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer +9 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +1 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

In this work, using self-consistent tight-binding calculations, for the first time, we show that a direct to indirect bandgap transition is possible in an armchair graphene nanoribbon by the application of an external bias along the width of the ribbon, opening up the possibility of new device applications. With the help of Dirac equation, we qualitatively explain this bandgap transition using the asymmetry in the spatial distribution of the perturbation potential produced inside the nanoribbon by the external bias. This is followed by the verification of the bandgap trends with a numerical technique using Magnus expansion of matrix exponentials. Finally, we show that the carrier effective masses possess tunable sharp characters in the vicinity of the bandgap transition points.

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from…

Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +1 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent bandgap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60mV/decade at room temperature, but much below the results experimentally shown till date, indicating room for technological improvement of bilayer graphene.

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Fengnian Xia, Damon B. Farmer, Yu-ming Lin +1 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time…

Photocurrent imaging and efficient photon detection in a graphene transistor

Fengnian Xia, Thomas Mueller, Roksana Golizadeh-mojarad +5 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, VDirac, the original p-type graphene channel turns into a p-n-p channel. When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection.

Ultrafast graphene photodetector

Fengnian Xia, Thomas Mueller, Yu-ming Lin +2 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the…

Dual Gate Graphene FETs with fT of 50 GHz

Yu-Ming Lin, Hsin-Ying Chiu, Keith A. Jenkins +3 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is demonstrated in a 350-nm gate length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications.