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Author

R. Neupane

20 papers · 2016–2025

2016: 12017: 22018: 02019: 02020: 02021: 22022: 62023: 62024: 22025: 1
2016peak 6 in 20222025

Frequent co-authors

Papers

showing 1–20 of 20 RSS

Monaural Multi-Speaker Speech Separation Using Efficient Transformer Model

S. Rijal, R. Neupane, S. P. Mainali +2 more

cs.SD · · cited 0× · arXiv ↗ · more like this ·

Cocktail party problem is the scenario where it is difficult to separate or distinguish individual speaker from a mixed speech from several speakers. There have been several researches going on in this field but the size and complexity of the model is being traded off with the accuracy and robustness of speech separation. "Monaural multi-speaker speech separation" presents a speech-separation model based on the Transformer architecture and its efficient forms. The model has been trained with the LibriMix dataset containing diverse speakers' utterances. The model separates 2 distinct speaker sources from a mixed audio input. The developed model approaches the reduction in computational complexity of the speech separation model, with minimum tradeoff with the performance of prevalent speech separation model and it has shown significant movement towards that goal. This project foresees, a…

Interface Structure and Electronic Properties in Cubic Boron Nitride - Diamond Heterostructures

Cody L. Milne, Hector Gomez, Adway Gupta +7 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Heterointerfaces of cubic boron nitride (cBN) with diamond have garnered significant interest due to their ultra-wide bandgaps and small lattice mismatch ($\sim1.5$\%), offering promising advancements in high-power and high-frequency electronic devices. However, the realization of this heterointerface has been limited by challenging growth conditions and insufficient understanding of interfacial properties. In this work, we employ density-functional theory to investigate the structural and electronic properties of diamond/cBN heterostructures as a function of interfacial stoichiometry, cBN thickness, and surface termination and passivation. Formation energies and interfacial bond lengths reveal that boron-terminated heterojunctions are the most stable while abrupt nitrogen-terminated heterojunctions are least stable, but can be stabilized by carbon-mixing. Bandstructures are computed…

Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Sohee Kwon, Yuhang Liu, Hang Chi +3 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maximally localized Wannier functions, we reveal the physical origins of the sensitivity of the sign of the AHC to strain and filling, and we determine the effect of surface termination on the half metallicity. We find that thin films terminated on the Te layers are the most energetically stable, but only the thin films terminated on both sides with the partially occupied Cr layers are half metals. In bulk Cr$_2$Te$_3$, the sensitivity of the sign of the AHC to strain and filling results from the…

Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials

Khalid Zobaid Adnan, Mahesh R. Neupane, Tianli Feng

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic potentials and the prediction of TBCs of several technologically promising metal diamond interfaces using nonequilibrium molecular dynamics. The predicted TBCs of Al, Zr, Mo, and Au-diamond interfaces are approximately 316, 88, 52, and 55 MW/m2K, respectively, after quantum corrections. The corresponding thermal boundary resistances are equivalent to 0.8 μm thick of Al, 1.4 μm Mo, 0.3 μm Zr, and 5.3 μm Au, respectively. We also find that the conventional simple models, such as the acoustic…

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Abhijit Biswas, Gustavo A. Alvarez, Tao Li +19 more

physics.app-ph · · arXiv ↗ · more like this ·

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20…

Structural, electronic, and magnetic properties of CrTe2

Yuhang Liu, Sohee Kwon, George J. de Coster +2 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calculated by the nudged elastic band method, are large, on the order of 0.5 eV. The self-consistent Hubbard $U$ correction parameters are calculated for all the phases of CrTe$_2$. The calculated magnetic moment of 1T-CrTe$_2$ with $\geq 2$ layers lies in the plane, whereas the magnetic moment of a monolayer is out-of-plane. Band filling and tensile bi-axial strain cause the magnetic moment of a monolayer to switch from out-of-plane to in-plane, and compressive bi-axial strain in a bilayer causes the…

Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites

Abhijit Biswas, Rui Xu, Joyce Christiansen-Salameh +21 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal…

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez +24 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane…

Structural tuning magnetism and topology in a magnetic topological insulator

Christopher Eckberg, Gang Qiu, Tao Qu +10 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain…

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Abhijit Biswas, Mingfei Xu, Kai Fu +18 more

physics.app-ph · · arXiv ↗ · more like this ·

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for…

Unidirectional domain growth of hexagonal boron nitride thin films

Abhijit Biswas, Qiyuan Ruan, Frank Lee +16 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable…

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Abhijit Biswas, Rishi Maiti, Frank Lee +21 more

physics.app-ph · · arXiv ↗ · more like this ·

Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low…

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Hang Chi, Yunbo Ou, Tim B. Eldred +22 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated…

Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

Hamed Vakili, Samiran Ganguly, George J. de Coster +2 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of…

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Eliezer Oliveira, Chenxi Li, Xiang Zhang +11 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment and the diamond surface quality. To investigate the stability of the oxygenated groups at specific diamond surfaces, we evaluated through fully atomistic reactive molecular mechanics (FARMM) simulations, using the ReaxFF force field, the formation energies of CO, COC, and COH groups on pristine and defective diamond surfaces (110), (111), and (311). According to our findings, the COH group has the lowest formation energy on a perfect (110) surface, while the COC is favored on a defective…

A Turbulent Heating Model Combining Diffusion and Advection Effects for Giant Planet Magnetospheres

C. S. Ng, B. R. Neupane, P. A. Delamere +1 more

physics.space-ph · · arXiv ↗ · more like this ·

The ion temperature of the magnetospheres of Jupiter and Saturn was observed to increase substantially from about 10 to 30 planet radii. Different heating mechanisms have been proposed to explain such observations, including a heating model for Jupiter based on MHD turbulence with flux-tube diffusion. More recently, an MHD turbulent heating model based on advection was shown to also explain the temperature increase at Jupiter and Saturn. We further develop this turbulent heating model by combining effects from both diffusion and advection. The combined model resolves the physical consistency requirement that diffusion should dominate over advection when the radial flow velocity is small and vice versa when it is large. Comparisons with observations show that previous agreements, using the advection only model, are still valid for larger radial distance. Moreover, the additional heating…

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li +9 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface…

Exciton condensate in bilayer transition metal dichalcogenides: strong coupling regime

Bishwajit Debnath, Yafis Barlas, Darshana Wickramaratne +2 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

Exciton condensation in an electron-hole bilayer system of monolayer transition metal dichalcogenides is analyzed at three different levels of theory to account for screening and quasiparticle renormalization. The large effective masses of the transition metal dichalcogenides place them in a strong coupling regime. In this regime, mean field (MF) theory with either an unscreened or screened interlayer interaction predicts a room temperature condensate. Interlayer and intralayer interactions renormalize the quasiparticle dispersion, and this effect is included in a GW approximation. The renormalization reverses the trends predicted from the unscreened or screened MF theories. In the strong coupling regime, intralayer interactions have a large impact on the magnitude of the order parameter and its functional dependencies on effective mass and carrier density.

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Yunqiu, Luo, Jinsong Xu +6 more

cond-mat.mes-hall · · arXiv ↗ · more like this ·

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection…

Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure

Supeng Ge, K. M. Masum Habib, Amrit De +4 more

cond-mat.mtrl-sci · · arXiv ↗ · more like this ·

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $θ$ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and current are analyzed using two different models, a tight-binding, non-equilibrium Green function model and an effective continuum model, and the qualitative features resulting from the two different models compare well. In the large-angle regime ($θ> 4^\circ$), the change in the effective h-BN bandgap seen by an electron at the $K$ point of the graphene causes the resistance to monotonically increase with angle by several orders of magnitude reaching a maximum at $θ= 30^\circ$. It does not affect…