The Non-Volatile Memory Technology Database (NVMDB) UCSD-CSE Techreport CS2015-1011 Kosuke Suzuki Fujitsu Laboratories Ltd.

Abstract

Flash, phase-change, spin-torque, and resistive memories are rapidly transforming how system designers think about memory devices, memory hierarchies, processor architectures, storage systems, operating systems, and applica-tions. We have gathered a comprehensive survey of the (at last count) 340 non-volatile memory technology papers pub-