Condensed Matter · cond-mat.mes-hall
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, A. K. Geim
- The canon
- #5 in Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
- #4 of 2007 in cond-mat.mes-hall
- #19 in Condensed Matter
Abstract
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
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